| PART |
Description |
Maker |
| IRFR9214 IRFU9214 IRFRU9214 |
-250V Single P-Channel HEXFET Power MOSFET in a I-Pak package
HEXFET? Power MOSFET
Power MOSFET(Vdss=-250V, Rds(on)=3.0ohm, Id=-2.7A)
HA1L-M1C53-G L6 Ovrsz ILL PB Rnd Flsh Mom SPDT 12V LED Sldr
|
IRF[International Rectifier]
|
| IRFR224 IRFU224 |
250V Single N-Channel HEXFET Power MOSFET in a I-Pak package
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.8A)
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFP264N IRFP264NPBF |
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=250V, Rds(on)=60mohm, Id=44A)
|
IRF[International Rectifier]
|
| IRFP4229PBF |
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-247AC package
|
International Rectifier
|
| IRFI634G ORFO634G |
POWER MOSFET 功率MOSFET
Power MOSFET(Vdss=250V / Rds(on)=0.45ohm / Id=5.6A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| AM29LV010B-45RJC AM29LV010B-55JC AM29LV010B-55JE A |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET ST Package
100V Single N-Channel HEXFET Power MOSFET in a SO-8 package
80V Single N-Channel HEXFET Power MOSFET in a SO-8 package
-40V Single P-Channel HEXFET Power MOSFET in a TSOP-6 (Micro 6) package
20V Dual N-Bidirectional HEXFET Power MOSFET in a 6-Lead FlipFET
30V N-Channel PowerTrench MOSFET 30VN沟道的PowerTrench MOSFET
-12V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package x8闪存EEPROM
1 Mb (128K x 8) Uniform Sector, Flash Memory 128K X 8 FLASH 3V PROM, 70 ns, PQCC32
x8 Flash EEPROM x8闪存EEPROM
|
Toshiba, Corp.
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| IRF614S |
250V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
HEXFET? Power MOSFET
|
International Rectifier
|
| IRFI624G |
Power MOSFET(Vdss=250V, Rds(on)=1.1ohm, Id=3.4A)
250V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFP254 |
Power MOSFET(Vdss = 250 V, Rds(on)=0.14ohm, Id=23A) 功率MOSFET（减振钢板基本\u003d 250伏，的Rdson）\u003d 0.14ohm，身份证\u003d 23A条）
HEXFET? Power MOSFET
250V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp.
Samsung semiconductor
|
| FQI27N25 FQB27N25 FQB27N25TMAM002 FQB27N25TMNAM002 |
250V N-Channel MOSFET(漏源电压250VN沟道增强型MOS场效应管) 25.5 A, 250 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263
250V N-Channel MOSFET(漏源电压50V的N沟道增强型MOS场效应管)
250V N-Channel QFET
|
Fairchild Semiconductor, Corp.
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
|
| IRFR5505 IRFU5055 IRFU5505 IRFRU5505 IRFR5505PBF I |
P Channel Surface Mount HEXFET Power MOSFET(P娌??琛ㄨ创??EXFET???MOS?烘?搴??)
-55V Single P-Channel HEXFET Power MOSFET in a I-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.11ohm, Id=-18A)
HEXFET? Power MOSFET
|
IRF[International Rectifier]
http://
|
| IDT61298S25TC IDT61298S25TCB IDT61298S25L28B IDT61 |
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
80V Single N-Channel HEXFET Power MOSFET in a D-Pak package x4的SRAM
600V Fast 1-8 kHz Discrete IGBT in a D2-Pak package x4的SRAM
x4 SRAM x4的SRAM
|
STMicroelectronics N.V.
Unisonic Technologies Co., Ltd.
HIROSE ELECTRIC Co., Ltd.
TE Connectivity, Ltd.
|
